Silicon Oxide Hollow Spheres
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| Product | Product Code | SAFETY DATA | Technical data | |
|---|---|---|---|---|
(2N) 99% Silicon Oxide Hollow Spheres |
SI-OX-02-HSP | SDS > | Data Sheet > | |
(3N) 99.9% Silicon Oxide Hollow Spheres |
SI-OX-03-HSP | SDS > | Data Sheet > | |
(4N) 99.99% Silicon Oxide Hollow Spheres |
SI-OX-04-HSP | SDS > | Data Sheet > | |
(5N) 99.999% Silicon Oxide Hollow Spheres |
SI-OX-05-HSP | SDS > | Data Sheet > |
American Elements specializes in producing high purity uniform shaped Silicon Oxide Hollow Spheres with the highest possible density and smallest possible average grain sizes for use in semiconductor, Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD) processes including Thermal and Electron Beam (E-Beam) Evaporation, Low Temperature Organic Evaporation, Atomic Layer Deposition (ALD), Metallic-Organic and Chemical Vapor Deposition (MOCVD). Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements also casts any of the rare earth metals and most other advanced materials into rod, bar, or plate form, as well as other machined shapes and through other processes such as nanoparticles and in the form of solutions and organometallics. We also produce Silicon Dioxide as pieces, tablets, powder, and sputtering target. Oxide compounds are not conductive to electricity. However, certain perovskite structured oxides are electronically conductive finding application in the cathode of solid oxide fuel cells and oxygen generation systems. Other shapes are available by request. | Compound Formula | O2Si |
|---|---|
| Molecular Weight | 60.09 |
| Appearance | White Powder |
| Melting Point | 1,600° C (2,912° F) |
| Boiling Point | 2,230° C (4,046° F) |
| Density | 2533 kg/m-3 |
| Solubility in H2O | N/A |
| Exact Mass | 59.9668 g/mol |
| Monoisotopic Mass | 59.967 Da |
| Signal Word | Warning |
|---|---|
| Hazard Statements | H319-H335-H373 |
| Hazard Codes | N/A |
| Risk Codes | N/A |
| Safety Statements | N/A |
| RTECS Number | VV7328000 |
| Transport Information | N/A |
| WGK Germany | nwg |
| Linear Formula | SiO2 |
|---|---|
| Pubchem CID | N/A |
| MDL Number | MFCD00011232 |
| EC No. | 262-373-8 |
| IUPAC Name | Dioxosilane |
| Beilstein/Reaxys No. | N/A |
| SMILES | O=[Si]=O |
| InchI Identifier | InChI=1S/O2Si/c1-3-2 |
| InchI Key | VYPSYNLAJGMNEJ-UHFFFAOYSA-N |
| Chemical Formula | |
| Molecular Weight | |
| Standard InchI | |
| Appearance | |
| Melting Point | |
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See more Silicon products. Silicon (atomic symbol: Si, atomic number: 14) is a Block P, Group 14, Period 3 element with an atomic weight of 28.085.
The number of electrons in each of Silicon's shells is 2, 8, 4 and its electron configuration is [Ne] 3s2 3p2. The silicon atom has a radius of 111 pm and a Van der Waals radius of 210 pm. Silicon was discovered and first isolated by Jöns Jacob Berzelius in 1823. Silicon makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, exceeded only by oxygen. The metalloid is rarely found in pure crystal form and is usually produced from the iron-silicon alloy ferrosilicon.
Silica (or silicon dioxide), as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Ultra high purity silicon can be doped with boron, gallium, phosphorus, or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics industry.The name Silicon originates from the Latin word silex which means flint or hard stone.